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NTE906 Integrated Circuit Dual, High Frequency, Differential Amplifier
Description: The NTE906 is an integrated circuit in a 12-Lead TO5 type package consisting of two independent differential amplifiers with associated constant-current transistors on a common monolithic substrate. The six transistors which comprise the amplifiers are general-purpose devices which exhibit low 1/f noise and a value of fT in excess of 1GHz. These features make the NTE906 useful from DC to 500MHz. Bias and load resistors have been omitted to provide maximum application flexibility. The monolithic construction of the NTE906 provides close electrical and thermal matching of the amplifiers. This feature makes this device particularly useful in dual-channel applications where matched performance of the two channels is required. Features: D Power Gain: 23dB (Typ) @ 200MHz D Noise Figure: 4.6dB (Typ) @ 200MHz D Two Different Amplifiers on a Common Substrate D Independently Accessible Input and Outputs Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Power Dissipation, PD Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW Derate Above +55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C The following ratings apply for each transistor: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Substrate Voltage (Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate (Pin9) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics (For Each Differential Amplifier) Input Offset Voltage Input Offset Current Input Bias Current Temperature Coefficient Magnitude of Input-Offset Voltage (For Each Transistor) DC Forward Base-Emitter Voltage Temperature Coefficient of Base-Emitter Voltage Collector Cutoff Current Collector-Emitter Breakdown Voltage Collector-Substrate Breakdown Voltage Emitter-Base Breakdown Voltage Dynamic Characteristics 1/f Noise Figure (For Single Transistor) Gain-Bandwidth Product (For Single Transistor) Collector-Base Capacitance NF fT CCB CCI CMR AGC A GP NF Y11 Y12 Y21 Y22 f = 100kHz, RS = 500, IC = 1mA VCE = 6V, IC = 5mA IC = 0, VCB = 5V IC = 0, VCI = 5V I3 = I9 = 2mA Bias Voltage = -6V Bias Voltage = -4.2V, f = 10MHz f = 200MHz, VCC = 12V, For Cascode Configuration I3 = I9 = 2mA For Diff. Amplifier Configuration I3 = I9 = 4mA (each Collector IC ' 2mA Cascode Cascode Cascode Diff. Amp Cascode Diff. Amp Cascode Diff. Amp Cascode Diff. Amp Note 2 Note 3 Collector-Substrate Capacitance (For Each Differential Amplifier) Common-Mode Rejection Ratio AGC Range, One Stage Voltage Gain, Single-Ended Output Insertion Power Gain Noise Figure Input Admittance - - - - - - - - - - - - - 100 75 22 23 4.6 1.5+j2.45 0.878+j1.3 0-j0.008 0-j0.013 17.9-j30.7 -10.5+j13 -0.503-j15 0.071+j0.62 - - - - - - - - - - - - - dB dB dB dB dB mmho mmho mmho mmho mmho mmho mmho mmho - - - - - 1.5 1.38 0.28 0.28 1.65 - - - - - dB GHz pF pF pF VBE VBE T ICBO VCE = 6V, IC = 1mA VCE = 6V, IC = 1mA VCB = 10V, IE = 0 - - - 15 20 5 774 -0.9 0.0013 24 60 7 - - 100 - - - mV mV/ C nA V V V VIO IIO IIB |VIO| T I3 = I9 = 2mA - - - - 0.25 0.3 13.5 1.1 - - 33 - mV A A V/C
V(BR)CEO IC = 1mA, IB = 0 V(BR)CIO IC = 10A, IB = 0, IE = 0 V(BR)EBO IE = 10A, IC = 0
Reverse Transfer Admittance
Forward Transfer Admittance
Output Admittance
Note 2. Pins 1 & 12 or Pins 6 & 7. Note 3. Pins 10 & 11 or Pins 4 & 5.
Pin Connection Diagram (Top View)
Q4 Vin (Bias) Q4 VEE/Substrate & Case Q1 Vin 10 Q1 Vout 11 Q2 Vout 12 Q2 Vin 1 3
1
8 9
6
7
Q6 Vin 6 5 4 Q6 Vout Q5 Vout Q5 Vin
2
Q3 VEE
Q3 Vin (Bias)
.370 (9.4) Dia Max .335 (8.5) Dia Max
.180 (4.57) Max
.500 (12.7) Min
.018 (0.48) Dia Typ .245 (6.23) Dia 4 3 2 1
5 6 7
12 11 10 9
8

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